1996 Jul 30
10
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max
L2
max
2.5 2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
A
L
0
2.5 5 mm
scale
b
c
D
b1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
1
2
3
L2
e1
e
e1
04-06-28
05-01-10
相关PDF资料
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相关代理商/技术参数
BF245A 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR JFET N TO-92
BF245A/0 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 500UA I(DSS) | TO-92VAR
BF245A/2 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 3MA I(DSS) | TO-92VAR
BF245A/B/C 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Silicon Field Effect Transistors
BF245A/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:JFET VHF/UHF Amplifiers
BF245A_D27Z 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF245A_D75Z 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF245A_D75Z_Q 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel